Analyzing the research status and development trend of SiC (Silicon Carbide) power device, this article describes the latest research results of switching characteristics and power loss characteristics of SiC power device. With detailed analysis on switching characteristics of Schottky Barrier Diode (SBD) and MOSFET, this paper emphasizes on the differences between them and the corresponding power devices. The comparison study between power loss characteristics of MPS and valve loss of silicon carbide thyristor for ultra-high voltage, also and the differences in power loss of switching power supply between SiC MOSFET and Si MOSFET provide scientific basis for the optimal selection and application of SiC power device.
| Published in | Journal of Electrical and Electronic Engineering (Volume 4, Issue 2) |
| DOI | 10.11648/j.jeee.20160402.13 |
| Page(s) | 18-23 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2016. Published by Science Publishing Group |
SiC, Power Device, Switching Characteristics, Power Loss Characteristics
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APA Style
Shi Mingming, Lu Wenwei, Ge Le. (2016). Comprehensive Analysis on Characteristics of SiC Power Device. Journal of Electrical and Electronic Engineering, 4(2), 18-23. https://doi.org/10.11648/j.jeee.20160402.13
ACS Style
Shi Mingming; Lu Wenwei; Ge Le. Comprehensive Analysis on Characteristics of SiC Power Device. J. Electr. Electron. Eng. 2016, 4(2), 18-23. doi: 10.11648/j.jeee.20160402.13
AMA Style
Shi Mingming, Lu Wenwei, Ge Le. Comprehensive Analysis on Characteristics of SiC Power Device. J Electr Electron Eng. 2016;4(2):18-23. doi: 10.11648/j.jeee.20160402.13
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Download@article{10.11648/j.jeee.20160402.13,
author = {Shi Mingming and Lu Wenwei and Ge Le},
title = {Comprehensive Analysis on Characteristics of SiC Power Device},
journal = {Journal of Electrical and Electronic Engineering},
volume = {4},
number = {2},
pages = {18-23},
doi = {10.11648/j.jeee.20160402.13},
url = {https://doi.org/10.11648/j.jeee.20160402.13},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.20160402.13},
abstract = {Analyzing the research status and development trend of SiC (Silicon Carbide) power device, this article describes the latest research results of switching characteristics and power loss characteristics of SiC power device. With detailed analysis on switching characteristics of Schottky Barrier Diode (SBD) and MOSFET, this paper emphasizes on the differences between them and the corresponding power devices. The comparison study between power loss characteristics of MPS and valve loss of silicon carbide thyristor for ultra-high voltage, also and the differences in power loss of switching power supply between SiC MOSFET and Si MOSFET provide scientific basis for the optimal selection and application of SiC power device.},
year = {2016}
}
TY - JOUR T1 - Comprehensive Analysis on Characteristics of SiC Power Device AU - Shi Mingming AU - Lu Wenwei AU - Ge Le Y1 - 2016/04/07 PY - 2016 N1 - https://doi.org/10.11648/j.jeee.20160402.13 DO - 10.11648/j.jeee.20160402.13 T2 - Journal of Electrical and Electronic Engineering JF - Journal of Electrical and Electronic Engineering JO - Journal of Electrical and Electronic Engineering SP - 18 EP - 23 PB - Science Publishing Group SN - 2329-1605 UR - https://doi.org/10.11648/j.jeee.20160402.13 AB - Analyzing the research status and development trend of SiC (Silicon Carbide) power device, this article describes the latest research results of switching characteristics and power loss characteristics of SiC power device. With detailed analysis on switching characteristics of Schottky Barrier Diode (SBD) and MOSFET, this paper emphasizes on the differences between them and the corresponding power devices. The comparison study between power loss characteristics of MPS and valve loss of silicon carbide thyristor for ultra-high voltage, also and the differences in power loss of switching power supply between SiC MOSFET and Si MOSFET provide scientific basis for the optimal selection and application of SiC power device. VL - 4 IS - 2 ER -
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