A Broadband Millimeter-Wave Waveguide Power Divider with High Isolation

Hua Zhang; Deng Yun Shao; Yun Shao

doi:doi:10.11648/j.ajpa.20190704.12

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A Broadband Millimeter-Wave Waveguide Power Divider with High Isolation

Hua Zhang, Deng Yun Shao, Yun Shao

Published in American Journal of Physics and Applications (Volume 7, Issue 4)

Received: 27 May 2019 Accepted: 16 July 2019 Published: 5 August 2019

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Abstract

In this paper, an E-plane stepped-impedance transformer and Y-junction bifurcation are used to form a waveguide power divider with ceramic substrate loaded with thin film resistors. This structure is realized high isolation in V-band by inserting a ceramic substrate at the H-plane center of the Y-junction waveguide bifurcation, both sides of which loaded with thin film resistors. The waveguide power divider was fabricated with aluminium-50% silicon, and has characteristics of light weight, lower coefficient of thermal expansion, good thermal conductivity, and its properties are more compatible with those of ceramic substrate. The principle and design procedure are described in detail. A V-band E-plane waveguide power divider is designed, fabricated, and measured. The measured results show that insertion loss is less than 0.4dB in the frequency range of 50~60GHz, with typical isolation levels of 25dB between the two output ports and amplitude imbalance less than 0.19dB, phase imbalance less than 1.4°. The measured and simulated results show good amplitude, phase, and isolation characteristics validating the proposed power divider.

Published in	American Journal of Physics and Applications (Volume 7, Issue 4)
DOI	10.11648/j.ajpa.20190704.12
Page(s)	101-108
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2019. Published by Science Publishing Group

Keywords

Millimeter-wave Waveguide Power Divider, High Isolation, Wide Bandwidth, Aluminium-50% Silicon

References

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[2]	J. Dittloff, J. Bornemann, and F. Arndt, “Computer aided design of optimum E- or H-plane N-furcated waveguide power dividers,” IEEE 17th European Microwave Conference, Rome. Italy, 1987, 10 (9), 181-186.
[3]	Wang X, and Zheng T, “Design of high isolation Ka-band waveguide power divider with phase balance,” IET International Radar Conference. Xi’an. China, 2013, 4.
[4]	L. T. Guo, J. W. Li, W. H. Huang, H. Shao, T. Ba, T. Y. Jiang, Y. Jiang, and G. J. Deng, “ A waveguide magic-T coplanar arms for high-power solid-state power combining,” IEEE Transactions on Microwave Theory and Techniques, 2017, 65 (8), 2942-2952.
[5]	L. T. Guo, J. W. Li, W. H. Huang, H. Shao, T. Ba, T. Y. Jiang, Y. Jiang, and G. J. Deng, “ Design of compact high-isolation four-way power combiners,” IEEE Transactions on Microwave Theory and Techniques, 2018, 66 (5), 2185-2198.
[6]	F. Takeda, O. Ishida, and Y. Isoda, “Waveguide power divider using metallic septum with resistive coupling slot,” IEEE-MTTS International Microwave Symposium Digest. Dallas, American, 1982, 12, 527-528.
[7]	Larry W. Epp, Daniel J. Hoppe, Abdur R. Khan and Scot L. Stride, “A high-power Ka-band (31-36GHz) solid-state amplifier based on low-loss corporate waveguide combing,” IEEE Transactions on Microwave Theory and Techniques, 2008, 56 (8), 1899-1908.
[8]	M. H. Chen, “A 19-way isolated power divider via the TE10 circular waveguide mode transition,” IEEE-MTTS International Microwave Symposium Digest. Baltimore, Maryland, American, 1986, 6, 511-513.
[9]	J. Dong, Y. Liu, Z. Q. Yang, and H. Peng, “Broadband millimeter-wave in-phase and out-of-phase waveguide dividers with high isolation,” Journal of Infrared, Millimeter and Terahertz Waves, 2015, 36 (11), 1076-1088.
[10]	K. J. Song, Y. C. Yan, Y. D. Zhou, M. Y. Fan, and Y. Fan, “Ka-band rectangular-waveguide Gysel power divider with low insertion loss and high output isolation,” Journal of Infrared, Millimeter and Terahertz Waves, 2018, 39 (7), 996-1004.
[11]	J. Y. Ding, Q. Y. Wang, and Y. B. Zhang, “A novel five-port waveguide power divider,” IEEE Microwave & wireless components letters, 2014, 24 (4), 224-226.
[12]	Q. X. Chu, Q. S. Wu, and D. Y. Mo, “A Ka-band E-plane waveguide magic-T with coplanar arms,” IEEE Transactions on Microwave Theory and Techniques, 2014, 62 (11), 2673-2679.
[13]	George. L. Matthaei, L. Young, and E. M. T. Jones, Microwave filters, impedance-matching networks and coupling structures, Dedham Massachusetts: Artech House, 1980, 255-354.
[14]	V. Zhurbenko, Passive microwave components and antennas, Croatia: InTech, 2010, 117-133.
[15]	H. Kagan, “N-way power divider,” IRE Transactions on Microwave Theory and Techniques, 1961, 9 (3), 198-199.
[16]	Charles A. Harper, Electronic materials and processes handbook, 3rd ed., New York: McGraw-Hill Companies, Inc, 2004.

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APA Style

Hua Zhang, Deng Yun Shao, Yun Shao. (2019). A Broadband Millimeter-Wave Waveguide Power Divider with High Isolation. American Journal of Physics and Applications, 7(4), 101-108. https://doi.org/10.11648/j.ajpa.20190704.12

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ACS Style

Hua Zhang; Deng Yun Shao; Yun Shao. A Broadband Millimeter-Wave Waveguide Power Divider with High Isolation. Am. J. Phys. Appl. 2019, 7(4), 101-108. doi: 10.11648/j.ajpa.20190704.12

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AMA Style

Hua Zhang, Deng Yun Shao, Yun Shao. A Broadband Millimeter-Wave Waveguide Power Divider with High Isolation. Am J Phys Appl. 2019;7(4):101-108. doi: 10.11648/j.ajpa.20190704.12

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@article{10.11648/j.ajpa.20190704.12,
  author = {Hua Zhang and Deng Yun Shao and Yun Shao},
  title = {A Broadband Millimeter-Wave Waveguide Power Divider with High Isolation},
  journal = {American Journal of Physics and Applications},
  volume = {7},
  number = {4},
  pages = {101-108},
  doi = {10.11648/j.ajpa.20190704.12},
  url = {https://doi.org/10.11648/j.ajpa.20190704.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajpa.20190704.12},
  abstract = {In this paper, an E-plane stepped-impedance transformer and Y-junction bifurcation are used to form a waveguide power divider with ceramic substrate loaded with thin film resistors. This structure is realized high isolation in V-band by inserting a ceramic substrate at the H-plane center of the Y-junction waveguide bifurcation, both sides of which loaded with thin film resistors. The waveguide power divider was fabricated with aluminium-50% silicon, and has characteristics of light weight, lower coefficient of thermal expansion, good thermal conductivity, and its properties are more compatible with those of ceramic substrate. The principle and design procedure are described in detail. A V-band E-plane waveguide power divider is designed, fabricated, and measured. The measured results show that insertion loss is less than 0.4dB in the frequency range of 50~60GHz, with typical isolation levels of 25dB between the two output ports and amplitude imbalance less than 0.19dB, phase imbalance less than 1.4°. The measured and simulated results show good amplitude, phase, and isolation characteristics validating the proposed power divider.},
 year = {2019}
}

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TY  - JOUR
T1  - A Broadband Millimeter-Wave Waveguide Power Divider with High Isolation
AU  - Hua Zhang
AU  - Deng Yun Shao
AU  - Yun Shao
Y1  - 2019/08/05
PY  - 2019
N1  - https://doi.org/10.11648/j.ajpa.20190704.12
DO  - 10.11648/j.ajpa.20190704.12
T2  - American Journal of Physics and Applications
JF  - American Journal of Physics and Applications
JO  - American Journal of Physics and Applications
SP  - 101
EP  - 108
PB  - Science Publishing Group
SN  - 2330-4308
UR  - https://doi.org/10.11648/j.ajpa.20190704.12
AB  - In this paper, an E-plane stepped-impedance transformer and Y-junction bifurcation are used to form a waveguide power divider with ceramic substrate loaded with thin film resistors. This structure is realized high isolation in V-band by inserting a ceramic substrate at the H-plane center of the Y-junction waveguide bifurcation, both sides of which loaded with thin film resistors. The waveguide power divider was fabricated with aluminium-50% silicon, and has characteristics of light weight, lower coefficient of thermal expansion, good thermal conductivity, and its properties are more compatible with those of ceramic substrate. The principle and design procedure are described in detail. A V-band E-plane waveguide power divider is designed, fabricated, and measured. The measured results show that insertion loss is less than 0.4dB in the frequency range of 50~60GHz, with typical isolation levels of 25dB between the two output ports and amplitude imbalance less than 0.19dB, phase imbalance less than 1.4°. The measured and simulated results show good amplitude, phase, and isolation characteristics validating the proposed power divider.
VL  - 7
IS  - 4
ER  -

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Author Information

Hua Zhang

Nanjing Electronic Devices Institute, Nanjing, China
Deng Yun Shao

Nanjing Electronic Devices Institute, Nanjing, China
Yun Shao

Nanjing Electronic Devices Institute, Nanjing, China

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APA Style

Hua Zhang, Deng Yun Shao, Yun Shao. (2019). A Broadband Millimeter-Wave Waveguide Power Divider with High Isolation. American Journal of Physics and Applications, 7(4), 101-108. https://doi.org/10.11648/j.ajpa.20190704.12

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ACS Style

Hua Zhang; Deng Yun Shao; Yun Shao. A Broadband Millimeter-Wave Waveguide Power Divider with High Isolation. Am. J. Phys. Appl. 2019, 7(4), 101-108. doi: 10.11648/j.ajpa.20190704.12

Copy | Download

AMA Style

Hua Zhang, Deng Yun Shao, Yun Shao. A Broadband Millimeter-Wave Waveguide Power Divider with High Isolation. Am J Phys Appl. 2019;7(4):101-108. doi: 10.11648/j.ajpa.20190704.12

Copy | Download

@article{10.11648/j.ajpa.20190704.12,
  author = {Hua Zhang and Deng Yun Shao and Yun Shao},
  title = {A Broadband Millimeter-Wave Waveguide Power Divider with High Isolation},
  journal = {American Journal of Physics and Applications},
  volume = {7},
  number = {4},
  pages = {101-108},
  doi = {10.11648/j.ajpa.20190704.12},
  url = {https://doi.org/10.11648/j.ajpa.20190704.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajpa.20190704.12},
  abstract = {In this paper, an E-plane stepped-impedance transformer and Y-junction bifurcation are used to form a waveguide power divider with ceramic substrate loaded with thin film resistors. This structure is realized high isolation in V-band by inserting a ceramic substrate at the H-plane center of the Y-junction waveguide bifurcation, both sides of which loaded with thin film resistors. The waveguide power divider was fabricated with aluminium-50% silicon, and has characteristics of light weight, lower coefficient of thermal expansion, good thermal conductivity, and its properties are more compatible with those of ceramic substrate. The principle and design procedure are described in detail. A V-band E-plane waveguide power divider is designed, fabricated, and measured. The measured results show that insertion loss is less than 0.4dB in the frequency range of 50~60GHz, with typical isolation levels of 25dB between the two output ports and amplitude imbalance less than 0.19dB, phase imbalance less than 1.4°. The measured and simulated results show good amplitude, phase, and isolation characteristics validating the proposed power divider.},
 year = {2019}
}

Copy | Download

TY  - JOUR
T1  - A Broadband Millimeter-Wave Waveguide Power Divider with High Isolation
AU  - Hua Zhang
AU  - Deng Yun Shao
AU  - Yun Shao
Y1  - 2019/08/05
PY  - 2019
N1  - https://doi.org/10.11648/j.ajpa.20190704.12
DO  - 10.11648/j.ajpa.20190704.12
T2  - American Journal of Physics and Applications
JF  - American Journal of Physics and Applications
JO  - American Journal of Physics and Applications
SP  - 101
EP  - 108
PB  - Science Publishing Group
SN  - 2330-4308
UR  - https://doi.org/10.11648/j.ajpa.20190704.12
AB  - In this paper, an E-plane stepped-impedance transformer and Y-junction bifurcation are used to form a waveguide power divider with ceramic substrate loaded with thin film resistors. This structure is realized high isolation in V-band by inserting a ceramic substrate at the H-plane center of the Y-junction waveguide bifurcation, both sides of which loaded with thin film resistors. The waveguide power divider was fabricated with aluminium-50% silicon, and has characteristics of light weight, lower coefficient of thermal expansion, good thermal conductivity, and its properties are more compatible with those of ceramic substrate. The principle and design procedure are described in detail. A V-band E-plane waveguide power divider is designed, fabricated, and measured. The measured results show that insertion loss is less than 0.4dB in the frequency range of 50~60GHz, with typical isolation levels of 25dB between the two output ports and amplitude imbalance less than 0.19dB, phase imbalance less than 1.4°. The measured and simulated results show good amplitude, phase, and isolation characteristics validating the proposed power divider.
VL  - 7
IS  - 4
ER  -

Copy | Download